半導(dǎo)體器件導(dǎo)論

定　價(jià)：￥69.00

作　者：	（美）尼曼（Neamen, D.A.）著
出版社：	清華大學(xué)出版社
叢編項(xiàng)：	國(guó)外大學(xué)優(yōu)秀教材微電子類系列
標(biāo)　簽：	半導(dǎo)體器件高等學(xué)校教材英文

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ISBN：	9787302124511	出版時(shí)間：	2006-01-01	包裝：	平裝
開本：	16開	頁(yè)數(shù)：	670	字?jǐn)?shù)：

內(nèi)容簡(jiǎn)介

本書是美國(guó)新墨西哥大學(xué)電機(jī)與計(jì)算機(jī)工程系Neamen教授所著的"Semiconductor Physics and Devices，3rd edition"一書的改進(jìn)版本。與原書相比，本書更好地將固體晶格結(jié)構(gòu)、量子力學(xué)入門知識(shí)、固體的量子理論以及半導(dǎo)體物理和半導(dǎo)體器件有機(jī)地結(jié)合在一起。利用本書，學(xué)生只需要具有高等數(shù)學(xué)和大學(xué)普通物理的基礎(chǔ)，用一個(gè)學(xué)期就可以系統(tǒng)地學(xué)習(xí)到半導(dǎo)體器件的基本理論，從而為進(jìn)入微電子學(xué)研究領(lǐng)域打下一個(gè)良好的基礎(chǔ)。這一特點(diǎn)也是目前國(guó)內(nèi)出版的同類教材很難達(dá)到的。另外，本書還盡量保持了原書的主要優(yōu)點(diǎn)： (1)注重基本概念和方法。本書從內(nèi)容的整體編排到具體章節(jié)的敘述，都體現(xiàn)了突出物理概念、強(qiáng)調(diào)基本分析方法的指導(dǎo)思想。書中的數(shù)學(xué)推導(dǎo)和物理分析融為一體，得出的結(jié)論不僅對(duì)理解物理概念十分重要，而且經(jīng)得起反復(fù)推敲。書中還采用了大量非常清晰的插圖，幫助讀者更好地理解基本概念。 (2)可讀性強(qiáng)，便于自學(xué)。全書脈絡(luò)清楚，說(shuō)理透徹，易于讀者理解和掌握。每一章的開頭都有引言，告訴讀者可以從本章學(xué)到什么，應(yīng)該掌握什么；每一章中都有例題和讀者自測(cè)題；每一章的最后還有總結(jié)、復(fù)習(xí)提綱和大量習(xí)題(其中包含一些采用計(jì)算機(jī)進(jìn)行模擬計(jì)算的練習(xí)題)。通過舉例和練習(xí)加深讀者對(duì)基本概念的理解是本書突出的特點(diǎn)。

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圖書目錄

Preface.
CHAPTER1TheCrystalStructureofSolids
1.0Preview
1.1SemiconductorMaterials
1.2TypesofSolids
1.3SpaceLattices
1.4AtomicBonding
1.5ImperfectionsandImpuritiesinSolids
∑1.6GrowthofSemiconductorMaterials
∑1.7DeviceFabricationTechniques:Oxidation
1.8Summary
Problems
CHAPTER2TheoryofSolids
2.0Preview
2.1PrinciplesofQuantumMechanics
2.2EnergyQuantizationandProbabilityConcepts
2.3Energy-BandTheory
2.4DensityofStatesFunction
2.5StatisticalMechanics
2.6Summary
Problems
CHAPTER3TheSemiconductorinEquilibrium
3.0Preview
3.1ChargeCarriersinSemiconductors
3.2DopantAtomsandEnergyLevels
3.3CarrierDistributionsintheExtrinsicSemiconductor
3.4StatisticsofDonorsandAcceptors
3.5CarrierConcentrations--EffectsofDoping
3.6PositionofFermiEnergyLevel--EffectsofDopingandTemperature
∑3.7DeviceFabricationTechnology:DiffusionandIonImplantation
3.8Summary
Problems
CHAPTER4CarrierTransportandExcessCarrier
Phenomena128
4.0Preview
4.1CarrierDrift
4.2CarrierDiffusion
4.3GradedImpurityDistribution
4.4CarrierGenerationandRecombination
∑4.5TheHallEffect
4.6Summary
Problems
CHAPTER5ThepnJunctionandMetal-SemiconductorContact
5.0Preview
5.1BasicStructureofthepnJunction
5.2ThepnJunction--ZeroAppliedBias
5.3ThepnJunction--ReverseAppliedBias
5.4Metal-SemiconductorContact--RectifyingJunction
5.5ForwardAppliedBias--AnIntroduction
∑5.6Metal-SemiconductorOhmic
∑5.7NonuniformlyDopedpnJunctions
∑5.8DeviceFabricationTechniques:Photolithography,Etching,andBonding
5.9Summary
Problems
CHAPTER6FundamentalsoftheMetal-oxide-SemiconductorField-EffectTransisitor
6.0Preview
6.1TheMOSField-EffectTransistorAction
6.2TheTwo-TerminalMOSCapacitor
6.3PotentialDifferencesintheMOSCapacitor
6.4Capacitance-VoltageCharacteristics
6.5TheBasicMOSFETOperation
6.6Small-SignalEquivalentCircuitandFrequencyLimitationFactors
∑6.7DeviceFabricationTechniques
6.8Summary
Problems
CHAPTER7Metal-Oxide-SemiconductorField-EffectTransistor:AdditionalConcepts
7.0Preview
7.1MOSFETScaling
7.2NonidealEffects
7.3ThresholdVoltageModifications
7.4AdditionalElectricalDharacteristics
7.5DeviceFabricationTechniques:SpecializedDevices
7.6Summary..
Problems
CHAPTER8NonequilibriumExcessCarriersinSemiconductors
8.0Preview
8.1CarrierGenerationandRecombination
8.2AnalysisofExcessCarriers
8.3AmbipolarTransport
8.4Quasi-FermiEnergyLevels
8.5ExcessCarrierLifetime
8.6SurfaceEffects
8.7Summary
Problems
CHAPTER9ThepnJunctionandSchottkyDiodes
9.0Preview
9.1ThepnandSchottkyBarrierJunctionsRevisited
9.2ThepnJunction--IdealCurrent-VoltageRelationship
9.3TheSchottkyBarrierJunction--IdealCurrent-VoltageRelationship
9.4Small-SignalModelofthepnJunction
9.5Generation-RecombinationCurrents
9.6JunctionBreakdown
9.7ChargeStorageandDiodeTransients
9.8Summary
Problems
CHAPTER10TheBipolarTransistor
10.0Preview
10.1TheBipolarTransistorAction
10.2Minority-CarrierDistribution
10.3Low-frequencyCommon-BaseCurrentGain
10.4NonidealEffects
10.5Hybrid-PiEquivalentCircuitModel
10.6FrequencyLimitations
∑10.7Large-SignalSwitching
∑10.8DeviceFabricationTechniques
10.9Summary
Problems
CHAPTER11AdditionalSemiconductorDevicesandDeviceConcepts
11.0Preview
11.1TheJunctionField-EffectTransistor
11.2Heterojunctions
11.3TheThyristor
11.4AdditionalMOSFETConcepts
11.5MicroelectromechanicalSystems(MEMS)
11.6Summary
Problems
CHAPTER12OpticalDevices
12.0Preview
12.1OpticalAbsorption
12.2SolarCells
12.3Photodetectors
12.4Light-EmittingDiodes
12.5LaserDiodes
12.6Summary
Problems
APPENDIXASelectedListofSymbols
APPENDIXBSystemofUnits,ConversionFactors,andGeneralConstants
APPENDIXCUnitofEnergy—TheElectron-Volt
APPENDIXD“Derivation”andApplicationsofSchrodinger'sWaveEquation
Index...