微機(jī)電器件設(shè)計(jì)、制造及計(jì)算機(jī)輔助設(shè)計(jì)

定　價(jià)：￥65.00

作　者：	郭占社
出版社：	北京航空航天大學(xué)出版社
叢編項(xiàng)：	京航空航天"研究生英文教材"系列叢書(shū)
標(biāo)　簽：	暫缺

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ISBN：	9787512421097	出版時(shí)間：	2016-06-01	包裝：
開(kāi)本：	16開(kāi)	頁(yè)數(shù)：		字?jǐn)?shù)：

內(nèi)容簡(jiǎn)介

　　Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．

作者簡(jiǎn)介

暫缺《微機(jī)電器件設(shè)計(jì)、制造及計(jì)算機(jī)輔助設(shè)計(jì)》作者簡(jiǎn)介

圖書(shū)目錄

Chapter1　Introduction ………………………………………………………………………… 1
1．1　ConceptofMEMS ……………………………………………………………………… 1
1．2　DevelopmentofMEMS ………………………………………………………………… 4
1．3　MEMSCAD …………………………………………………………………………… 9
Chapter2　BasictheoryofMEMS …………………………………………………………… 12
2．1　TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1　Introduction ……………………………………………………………………… 12
2．1．2　Operatingprinciples …………………………………………………………… 13
2．1．3　Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4　ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5　Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6　Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2　RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1　Introduction ……………………………………………………………………… 34
2．2．2　Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3　RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4　RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3　MembranetheoryofMEMS ………………………………………………………… 47
2．3．1　Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2　Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3　MEMSmaterials …………………………………………………………………… 53
3．1　Monocrystallinesilicon ……………………………………………………………… 53
3．1．1　Introduction ……………………………………………………………………… 53
3．1．2　Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2　Polycrystallinesilicon ………………………………………………………………… 64
3．3　Silica …………………………………………………………………………………… 66
3．4　Piezoelectricmaterials ………………………………………………………………… 67
3．4．1　Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2　Quartzcrystal …………………………………………………………………… 68
3．4．3　Piezoelectricceramics …………………………………………………………… 73
3．5　OtherMEMSmaterials ……………………………………………………………… 75
3．6　Summary ……………………………………………………………………………… 76
Chapter4　MEMStechnology ………………………………………………………………… 77
4．1　MEMSlithographyprocess ………………………………………………………… 78
4．2　KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1　Wafercleaning …………………………………………………………………… 80
4．2．2　Siliconoxidation ………………………………………………………………… 80
4．2．3　Spincoatingprocess …………………………………………………………… 87
4．2．4　Prebaking ………………………………………………………………………… 90
4．2．5　Exposure ………………………………………………………………………… 92
4．2．6　Development ……………………………………………………………………… 94
4．2．7　Hardening ………………………………………………………………………… 96
4．2．8　FabricationoftheSiO2 window ………………………………………………… 97
4．3　SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1　Bulksilicontechnology ………………………………………………………… 98
4．3．2　Surfacesiliconprocess ………………………………………………………… 103
4．3．3　LIGAtechnology ……………………………………………………………… 104
4．3．4　Sputteringtechnology ………………………………………………………… 105
4．3．5　LiftGoffprocess ………………………………………………………………… 107
4．4　Filmpreparationtechnology………………………………………………………… 107
4．5　Bondingprocess ……………………………………………………………………… 108
4．5．1　Anodicbondingprocess………………………………………………………… 109
4．5．2　SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3　Metaleutecticbonding ………………………………………………………… 113
4．5．4　Coldpressureweldingbonding ……………………………………………… 114
4．6　Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1　Introduction …………………………………………………………………… 115
4．6．2　EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3　EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7　Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5　Frictionwearandtearundermicroscale ……………………………………… 126
5．1　OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1　MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2　MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3　MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2　OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1　OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2　OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3　ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1　Structureandworkingprinciple ……………………………………………… 141
5．3．2　Calculationofpertinenttheory ……………………………………………… 142
5．3．3　Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4　Testingresultsanddataanalysis……………………………………………… 152
5．3．5　ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4　Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6　MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1　Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1　Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2　Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3　Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4　Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5　ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2　Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1　Workingprinciple ……………………………………………………………… 177
6．2．2　DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3　Classificationofmicromechanicalgyroscope ………………………………… 188
6．3　Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1　Workingpincinple ……………………………………………………………… 190
6．3．2　Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4　MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1　Introduction …………………………………………………………………… 198
6．4．2　Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3　Theoreticalcalculation ………………………………………………………… 200
6．4．4　Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5　Experimentresultanddiscussion …………………………………………… 209
6．5　Microscopicmorphologytestingmethod ………………………………………… 211
6．6　Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7　Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1　Importantconceptsofthesoftware………………………………………………… 218
7．2　IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3　ThecoordinatesysteminAnsys …………………………………………………… 221
7．4　Engineeringexamples ……………………………………………………………… 226
7．4．1　StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2　ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3　CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4　Fatiguestrengthcalculationexample ………………………………………… 264
7．5　Summary ……………………………………………………………………………… 272